●VDSS=120V / ID=165A
RDS(On)=3.85mΩ(Typ.)@VGS=10V
● ROHS Compliant
●Low Dense Cell Design
●Fast switching speed
Si-Trend’s Low Voltage power MOSFET files offers a broad range of breakdown voltages from –100 to 200 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. Si-Trend’s process technology for low-voltage power MOSFETs ensures an enhanced power handling capability, resulting in high-efficiency solutions.