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VDSS=200V  ID=50A

 RDS(ON)=30mΩ(Typ.)@VGS=10V

●Low On-Resistance 

●Improved dv/dt capability

●Super Low Gate Charge

●100% EAS Guaranteed

●Fast switching speed 

资料下载:SI200N05H

Si-Trend’s Low Voltage power MOSFET files offers a broad range of breakdown voltages from –100 to 200 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. Si-Trend’s process technology for low-voltage power MOSFETs  ensures an enhanced power handling capability, resulting in high-efficiency solutions.