●VDSS=200V  ID=50A
	 RDS(ON)=30mΩ(Typ.)@VGS=10V
	●Low On-Resistance 
	●Improved dv/dt capability
	●Super Low Gate Charge
	●100% EAS Guaranteed
	●Fast switching speed 
                         
                     
                 
                
             
            
            
            
                
	Si-Trend’s Low Voltage power MOSFET files offers a broad range of breakdown voltages from –100 to 200 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. Si-Trend’s process technology for low-voltage power MOSFETs  ensures an enhanced power handling capability, resulting in high-efficiency solutions.