●VDSS=200V ID=90A
RDS(ON)=18mΩ(Typ.)@VGS=10V
●Low On-Resistance
●Improved dv/dt capability
●Super Low Gate Charge
●100% EAS Guaranteed
●Fast switching speed
Si-Trend’s Low Voltage power MOSFET files offers a broad range of breakdown voltages from –100 to 200 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. Si-Trend’s process technology for low-voltage power MOSFETs ensures an enhanced power handling capability, resulting in high-efficiency solutions.