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 ●VDSS=200V  ID=90A

  RDS(ON)=18mΩ(Typ.)@VGS=10V

  ●Low On-Resistance

  ●Improved dv/dt capability

  ●Super Low Gate Charge

  ●100% EAS Guaranteed

  ●Fast switching speed

资料下载:SI200N06P

Si-Trend’s Low Voltage power MOSFET files offers a broad range of breakdown voltages from –100 to 200 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. Si-Trend’s process technology for low-voltage power MOSFETs  ensures an enhanced power handling capability, resulting in high-efficiency solutions.