●VDSS=250V / ID=45A
RDS(On)=70mΩ(Typ.)@VGS=10V
●Fast switching
●100% avalanche tested
●Improved dv/dt capability
Si-Trend’s Low Voltage power MOSFET files offers a broad range of breakdown voltages from –100 to 200 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. Si-Trend’s process technology for low-voltage power MOSFETs ensures an enhanced power handling capability, resulting in high-efficiency solutions.