●VDSS=400V / ID=12A
RDS(On)=0.35Ω(Typ.)@VGS=10V
●Fast switching
●100% avalanche tested
●Improved dv/dt capability
Si-Trend’s High Voltage power MOSFET files offers a broad range of breakdown voltages from 400 to 900 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. Si-Trend’s process technology for high-voltage power MOSFETs ensures an enhanced power handling capability, resulting in high-efficiency solutions.
