●VDSS=800V ID=3A
RDS(ON)=4Ω(Typ.)@VGS=10V
●100% avalanche tested
●RoHS compliant
●Smart design in high voltage technology.
Si-Trend’s High Voltage power MOSFET files offers a broad range of breakdown voltages from 500 to 900 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. Si-Trend’s process technology for high-voltage power MOSFETs ensures an enhanced power handling capability, resulting in high-efficiency solutions.
