VDSS=650V ID=4A
RDS(ON)=2.8Ω(Max.)@VGS=10V
High Reliability Capability with Passivation
100% avalanche tested
RoHS compliant
Low ON Resistance
Si-Trend’s High Voltage power MOSFET files offers a broad range of breakdown voltages from 500 to 900 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. Si-Trend’s process technology for high-voltage power MOSFETs ensures an enhanced power handling capability, resulting in high-efficiency solutions.
