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VDSS=650V  ID=13A  
RDS(ON)=0.65Ω(Max.)@VGS=10V

Fast switching
100% avalanche tested

Improved dv/dt capability
Low ON Resistance

资料下载:SI13N65F
Si-Trend’s High Voltage power MOSFET files offers a broad range of breakdown voltages from 500 to 900 V, with low gate charge and low on-resistance, combined with state-of-the art packaging.  Si-Trend’s process technology for  high-voltage power MOSFETs ensures an enhanced power handling capability, resulting in high-efficiency solutions.