VDSS=500V ID=18A
RDS(ON)=0.34Ω(max.)@VGS=10V
Low On-Resistance
Excellent CdV/dt effect decline
Super Low Gate Charge
100% EAS Guaranteed
Fast switching speed
Si-Trend’s High Voltage power MOSFET files offers a broad range of breakdown voltages from 500 to 900 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. Si-Trend’s process technology for high-voltage power MOSFETs ensures an enhanced power handling capability, resulting in high-efficiency solutions.
