欢迎您来到晶芯微科技有限公司官网!
服务热线:86-755-21033691

 VDSS=500V   ID=16A

  RDS(ON)=0.3Ω(Typ.)@VGS=10V 

  Low On-Resistance

  Excellent CdV/dt effect decline

  Super Low Gate Charge

  100% EAS Guaranteed

  Fast switching speed 

资料下载:SI16N50F
Si-Trend’s High Voltage power MOSFET files offers a broad range of breakdown voltages from 500 to 900 V, with low gate charge and low on-resistance, combined with state-of-the art packaging.  Si-Trend’s process technology for  high-voltage power MOSFETs ensures an enhanced power handling capability, resulting in high-efficiency solutions.