VDSS=500V ID=25A
RDS(ON)=0.2Ω(Max.)@VGS=10V
Low On-Resistance
Improved dv/dt capability
Super Low Gate Charge
100% EAS Guaranteed
Fast switching speed
Si-Trend’s High Voltage power MOSFET files offers a broad range of breakdown voltages from 500 to 900 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. Si-Trend’s process technology for high-voltage power MOSFETs ensures an enhanced power handling capability, resulting in high-efficiency solutions.
