20V/165A RDS(ON) =5.0mΩ(max.)@VGS=10V
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Super Low Gate Charge
Si-Trend’s Low Voltage power MOSFET files offers a broad range of breakdown voltages from –100 to 200 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. Si-Trend’s process technology for low-voltage power MOSFETs ensures an enhanced power handling capability, resulting in high-efficiency solutions.