100V/120A RDS(On)=6.0mΩ(max.)@VGS=10V
Uses Si-trend advanced MOSFET technology
Extremely low on-resistance RDS(on)
Qualified according to JEDEC criteria
Excellent Qg x RDS(on) product(FOM)
Si-Trend’s Low Voltage power MOSFET files offers a broad range of breakdown voltages from –100 to 200 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. Si-Trend’s process technology for low-voltage power MOSFETs ensures an enhanced power handling capability, resulting in high-efficiency solutions.
