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100V/120A  RDS(On)=6.0mΩ(max.)@VGS=10V

Uses Si-trend advanced MOSFET technology

Extremely low on-resistance RDS(on)

Qualified according to JEDEC criteria

Excellent Qg x RDS(on) product(FOM)

资料下载:SI100N13B

Si-Trend’s Low Voltage power MOSFET files offers a broad range of breakdown voltages from –100 to 200 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. Si-Trend’s process technology for low-voltage power MOSFETs  ensures an enhanced power handling capability, resulting in high-efficiency solutions.