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VDS=60V  ID=210A  
RDS(ON)=2.3mΩ(Typ.)@VGS=10V

Low Dense Cell Design

Reliable and Rugged

Advanced trench process technology

资料下载:SI60N21B

Si-Trend’s Low Voltage power MOSFET files offers a broad range of breakdown voltages from –100 to 200 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. Si-Trend’s process technology for low-voltage power MOSFETs  ensures an enhanced power handling capability, resulting in high-efficiency solutions.