VDS=80V/VGS=±25V/ID=110A 
	RDS(ON)=5.5mΩ(Typ.)@VGS=10V 
	Low Dense Cell Design 
	Reliable and Rugged 
	Advanced trench process technology 
                         
                     
                 
                
             
            
            
            
                
	Si-Trend’s Low Voltage power MOSFET files offers a broad range of breakdown voltages from –100 to 200 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. Si-Trend’s process technology for low-voltage power MOSFETs  ensures an enhanced power handling capability, resulting in high-efficiency solutions.