VDS= -30V ID= -15A
RDS(ON)=55mΩ(max.)@VGS= -10V
RDS(ON)=90mΩ(max.)@VGS=-4.5V
Rugged and reliable.
Green Device Available
Super high dense cell trench design for low RDS(on)
Si-Trend’s Low Voltage power MOSFET files offers a broad range of breakdown voltages from –100 to 200 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. Si-Trend’s process technology for low-voltage power MOSFETs ensures an enhanced power handling capability, resulting in high-efficiency solutions.
