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VDS= -30V  ID= -15A

RDS(ON)=55mΩ(max.)@VGS= -10V

RDS(ON)=90mΩ(max.)@VGS=-4.5V

Rugged and reliable.

Green Device Available

Super high dense cell trench design for low RDS(on)

资料下载:SI9435GM

Si-Trend’s Low Voltage power MOSFET files offers a broad range of breakdown voltages from –100 to 200 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. Si-Trend’s process technology for low-voltage power MOSFETs  ensures an enhanced power handling capability, resulting in high-efficiency solutions.