VDSS= -40V ID= -23A
RDS(ON)=40mΩ(max.)@VGS= -10V
RDS(ON)=65mΩ(max.)@VGS=-4.5V
Low On-Resistance
Excellent CdV/dt effect decline
Super Low Gate Charge
100% EAS Guaranteed
Green Device Available
dvanced high cell density Trench technology
Si-Trend’s Low Voltage power MOSFET files offers a broad range of breakdown voltages from –100 to 200 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. Si-Trend’s process technology for low-voltage power MOSFETs ensures an enhanced power handling capability, resulting in high-efficiency solutions.
