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  VDSS=-100V ID=-4.1A

  RDS(ON)=0.65Ω(max.)@VGS=-10V 

  RDS(ON)=0.7Ω(max.)@VGS=-4.5V 

  Excellent CdV/dt effect decline

  Super Low Gate Charge

  100% EAS Guaranteed

  Green Device Available

  Advanced high cell density Trench technology

资料下载:SI0107D

Si-Trend’s Low Voltage power MOSFET files offers a broad range of breakdown voltages from –100 to 200 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. Si-Trend’s process technology for low-voltage power MOSFETs  ensures an enhanced power handling capability, resulting in high-efficiency solutions.