欢迎您来到晶芯微科技有限公司官网!
服务热线:86-755-21033691

VDS= -60V   ID=-13A

RDS(ON)=90mΩ(max.)@VGS= -10V

Low On-Resistance

Low Input Capacitance

Super Low Gate Charge

Low Input / Output Leakage

资料下载:SI6113D

Si-Trend’s Low Voltage power MOSFET files offers a broad range of breakdown voltages from –100 to 200 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. Si-Trend’s process technology for low-voltage power MOSFETs  ensures an enhanced power handling capability, resulting in high-efficiency solutions.