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VDSS=30VVGSS=±12VID=5A

 RDS(ON)=35mΩ(Max.)@VGS=10V

 RDS(ON)=36mΩ(Max.)@VGS=4.5V

 RDS(ON)=52mΩ(Max.)@VGS=2.5V

 Super High Dense Cell Design

 Reliable and Rugged

  Advanced trench process technology

资料下载:SI30N02D

Si-Trend’s Low Voltage power MOSFET files offers a broad range of breakdown voltages from –100 to 200 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. Si-Trend’s process technology for low-voltage power MOSFETs  ensures an enhanced power handling capability, resulting in high-efficiency solutions.