VDSS=30V／VGSS=±12V／ID=5A
RDS(ON)=35mΩ(Max.)@VGS=10V
RDS(ON)=36mΩ(Max.)@VGS=4.5V
RDS(ON)=52mΩ(Max.)@VGS=2.5V
Super High Dense Cell Design
Reliable and Rugged
Advanced trench process technology
Si-Trend’s Low Voltage power MOSFET files offers a broad range of breakdown voltages from –100 to 200 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. Si-Trend’s process technology for low-voltage power MOSFETs ensures an enhanced power handling capability, resulting in high-efficiency solutions.
