VDSS=30V  ID=55A
	  RDS(ON)=8.5mΩ(max.)@VGS=10V 
	  RDS(ON)=14mΩ(max.)@VGS=4.5V 
	  Excellent CdV/dt effect decline
	  Super Low Gate Charge
	  100% EAS Guaranteed
	  Green Device Available
	  Advanced high cell density Trench technology
                         
                     
                 
                
             
            
            
            
                
	Si-Trend’s Low Voltage power MOSFET files offers a broad range of breakdown voltages from –100 to 200 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. Si-Trend’s process technology for low-voltage power MOSFETs  ensures an enhanced power handling capability, resulting in high-efficiency solutions.