VDSS=800V ID=7A
RDS(ON)=1.35Ω(Typ.)@VGS=10V
Fast switching
100% avalanche tested
Improved dv/dt capability
Low ON Resistance
Si-Trend’s High Voltage power MOSFET files offers a broad range of breakdown voltages from 500 to 900 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. Si-Trend’s process technology for high-voltage power MOSFETs ensures an enhanced power handling capability, resulting in high-efficiency solutions.
