●VDSS= -30V ID= -35A
RDS(ON)=20mΩ(max.)@VGS= -10V
RDS(ON)=32mΩ(max.)@VGS=-4.5V
●Low On-Resistance
●Excellent CdV/dt effect decline
●Super Low Gate Charge
●100% EAS Guaranteed
●Green Device Available
●Advanced high cell density Trench technology
Si-Trend’s Low Voltage power MOSFET files offers a broad range of breakdown voltages from –100 to 200 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. Si-Trend’s process technology for low-voltage power MOSFETs ensures an enhanced power handling capability, resulting in high-efficiency solutions.
