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VDSS=500V  ID=25A

RDS(ON)=0.21Ω(Typ.)@VGS=10V,ID=11.5V

Low On-Resistance

Improved dv/dt capability

Super Low Gate Charge

100% EAS Guaranteed

Green Device Available

Fast switching speed 

资料下载:SI25N50AP
Si-Trend’s High Voltage power MOSFET files offers a broad range of breakdown voltages from 500 to 900 V, with low gate charge and low on-resistance, combined with state-of-the art packaging.  Si-Trend’s process technology for  high-voltage power MOSFETs ensures an enhanced power handling capability, resulting in high-efficiency solutions.