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●VDSS=400V ID=6A
RDS(ON)=1.0Ω(Max.)@VGS=10V
●Fast switching
●100% avalanche tested
●Improved dv/dt capability
●Low ON Resistance

资料下载:SI6N40B
Si-Trend’s High Voltage power MOSFET files offers a broad range of breakdown voltages from 400 to 900 V, with low gate charge and low on-resistance, combined with state-of-the art packaging.  Si-Trend’s process technology for  high-voltage power MOSFETs ensures an enhanced power handling capability, resulting in high-efficiency solutions.