●VDSS=400V ID=6A
RDS(ON)=1.0Ω(Max.)@VGS=10V
●Fast switching
●100% avalanche tested
●Improved dv/dt capability
●Low ON Resistance
Si-Trend’s High Voltage power MOSFET files offers a broad range of breakdown voltages from 400 to 900 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. Si-Trend’s process technology for high-voltage power MOSFETs ensures an enhanced power handling capability, resulting in high-efficiency solutions.
